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may 2009 doc id 15618 rev 1 1/13 13 STS10N3LH5 n-channel 30 v, 0.019 ? , 10 a, so-8 stripfet? v power mosfet r ds(on) * q g industry benchmark extremely low on-resistance r ds(on) very low switching gate charge high avalanche ruggedness low gate drive power losses application switching applications description this stripfet?v power mosfet technology is among the latest improvements, which have been especially tailored to achieve very low on-state resistance providing also one of the best-in-class fom. figure 1. internal schematic diagram features type v dss r ds(on) max i d STS10N3LH5 30 v 0.021 ? 10 a s o- 8 table 1. device summary order codes marking package packaging STS10N3LH5 10d3l so-8 tape and reel www.st.com
contents STS10N3LH5 2/13 doc id 15618 rev 1 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
STS10N3LH5 electrical ratings doc id 15618 rev 1 3/13 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage (v gs = 0) 30 v v gs gate-source voltage 22 v i d (1) 1. limited by wire bonding drain current (continuous) at t c = 25 c 10 a i d drain current (continuous) at t c = 100 c 7 a i dm (2) 2. pulse width limited by safe operating area drain current (pulsed) 40 a p tot total dissipation at t c = 25 c 2.5 w derating factor 0.02 w/c e as (3) 3. starting t j = 25 c, i d = 21 a, l= 0.2 mh single pulse avalanche energy 50 mj t j t stg operating junction temperature storage temperature - 55 to 150 c table 3. thermal resistance symbol parameter value unit r thjc thermal resistance junction-case max 50 c/w r thja thermal resistance junction-case max 100 c/w t j maximum lead temperature for soldering purpose 275 c
electrical characteristics STS10N3LH5 4/13 doc id 15618 rev 1 2 electrical characteristics (t case = 25 c unless otherwise specified) table 4. static symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a, v gs = 0 30 v i dss zero gate voltage drain current (v gs = 0) v ds = 30 v v ds = 30 v, tc = 125 c 1 10 a a i gss gate body leakage current (v ds = 0) v gs = 22 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 1 v r ds(on) static drain-source on resistance v gs = 10 v, i d = 5 a 0.019 0.021 ? v gs = 4.5 v, i d = 5 a 0.023 0.028 ? table 5. dynamic symbol parameter test conditions min typ. max. unit c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25 v, f = 1 mhz, v gs = 0 - 475 97 19 - pf pf pf q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 15 v, i d = 10 a v gs = 5 v ( figure 14 ) - 4.6 1.7 1.9 - nc nc nc q gs1 q gs2 pre v th gate-to-source charge post v th gate-to- source charge v dd = 15 v, i d = 10a v gs = 5 v ( figure 19 ) - 0.67 0.84 - nc nc r g gate input resistance f = 1 mhz gate bias bias = 0 test signal level = 20 mv open drain -2.5 - ?
STS10N3LH5 electrical characteristics doc id 15618 rev 1 5/13 table 6. switching on/off (resistive load) symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on delay time rise time v dd = 15 v, i d = 5 a, r g = 4.7 ?, v gs = 10 v (figure 13 and figure 18) - 4 22 - ns ns t d(off) t f turn-off delay time fall time v dd = 15 v, i d = 5 a, r g = 4.7 ?, v gs = 10 v (figure 13 and figure 18) - 13 2.8 - ns ns table 7. source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm (1) 1. pulsed: pulse duration = 300 s, duty cycle 1.5 % source-drain current source-drain current (pulsed) - 10 40 a a v sd forward on voltage i sd = 5 a, v gs = 0 -1.1v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 10 a, v dd = 25 v di/dt = 100 a/s, (figure 15) - 16.2 7.8 1 ns nc a
electrical characteristics STS10N3LH5 6/13 doc id 15618 rev 1 2.1 electrical characteristics (curves) figure 2. safe operating area figure 3. thermal impedance figure 4. output characteristics figure 5. transfer characteristics figure 6. normalized bv dss vs temperature figure 7. static drain-source on resistance i d 100 10 1 0.1 0.1 1 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 100m s 1 s 10m s 0.01 tj=150c tc=25c s inlge p u l s e am0 38 99v1 i d 3 0 20 10 0 0 2 v d s (v) 4 (a) 1 3 40 50 5v 6v v g s =10v 60 70 4v 3 v am0 3 900v1 i d 3 0 20 10 0 0 4 v g s (v) 8 (a) 2 6 40 50 v d s =5v 60 70 am0 3 901v1 bv d ss -55 -5 t j (c) (norm) - 3 0 70 20 45 95 0. 8 5 0.90 0.95 1.00 1.05 1.10 120 am0 3 902v1 r d s (on) 15 10 5 0 0 15 i d (a) ( ? ) 10 20 20 25 3 0 3 5 i d =1 3 .5a v g s =10v 5 25 am0 3 90 3 v1
STS10N3LH5 electrical characteristics doc id 15618 rev 1 7/13 figure 8. gate charge vs gate-source voltage figure 9. capacitance variations figure 10. normalized gate threshold voltage vs temperature figure 11. normalized on resistance vs temperature figure 12. source-drain diode forward characteristics v g s 6 4 2 0 0 2 q g (nc) (v) 8 4 6 10 v dd =15v i d =27a 12 am0 3 904v1 c 3 10 210 110 10 0 20 v d s (v) (pf) 10 410 ci ss co ss cr ss t j =25c f=1mhz 510 610 710 8 10 am0 3 905v1 v g s (th) 0.7 0.6 0.5 0.4 -55 -5 t j (c) (norm) - 3 0 0. 8 70 20 45 95 120 145 0.9 1.0 1.1 am0 3 906v1 r d s (on) 1.0 0. 8 0.6 0.4 -55 -5 t j (c) (norm) - 3 0 70 20 45 95 1.2 1.4 1.6 1. 8 120 am0 3 907v1 v s d 0 10 i s d (a) (v) 5 25 15 20 0.4 0.5 0.6 0.7 0. 8 0.9 1.0 t j =-55c t j =175c t j =25c 1.1 am0 3 90 8 v1
test circuits STS10N3LH5 8/13 doc id 15618 rev 1 3 test circuits figure 13. switching times test circuit for resistive load figure 14. gate charge test circuit figure 15. test circuit for inductive load switching and diode recovery times figure 16. unclamped inductive load test circuit figure 17. unclamped inductive waveform figure 18. switching time waveform am0146 8 v1 v g s p w v d r g r l d.u.t. 2200 f 3 . 3 f v dd am01469v1 v dd 47k ? 1k ? 47k ? 2.7k ? 1k ? 12v v i =20v=v gmax 2200 f p w i g =con s t 100 ? 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 ? a a b b r g g fa s t diode d s l=100 h f 3 . 3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3 . 3 f v dd am01472v1 v (br)d ss v dd v dd v d i dm i d am0147 3 v1 v d s t on td on td off t off t f t r 90 % 10 % 10 % 0 0 90 % 90 % 10 % v g s
STS10N3LH5 test circuits doc id 15618 rev 1 9/13 figure 19. gate charge waveform
package mechanical data STS10N3LH5 10/13 doc id 15618 rev 1 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark.
STS10N3LH5 package mechanical data doc id 15618 rev 1 11/13 dim. mm. inch min. typ max. min. typ. max. a 1.75 0.068 a1 0.1 0.25 0.003 0.009 a2 1.65 0.064 a3 0.65 0.85 0.025 0.033 b 0.35 0.48 0.013 0.018 b1 0.19 0.25 0.007 0.010 c 0.25 0.5 0.010 0.019 c1 45 (typ.) d 4.8 5.0 0.188 0.196 e 5.8 6.2 0.228 0.244 e 1.27 0.050 e3 3.81 0.150 f 3.8 4.0 0.14 0.157 l 0.4 1.27 0.015 0.050 m 0.6 0.023 s 8 (max.) so-8 mechanical data
revision history STS10N3LH5 12/13 doc id 15618 rev 1 5 revision history table 8. document revision history date revision changes 06-may-2009 1 first release
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